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In this paper, we present the first systematic study of uniaxial/ biaxial stress effects on mobility (mu) and Ion enhancements in high-k n/pFETs. It is demonstrated for the first time that mu enhancement of high-k nFETs by biaxial strain is greater than that of SiO2 nFETs in high Eeff, resulting in the better Ion improvement of high-k nFETs than SiO2 nFETs particularly in shorter-channel regime. It is also shown that mu enhancement of high-k pFETs by strain is comparable to that of SiO2 pFETs. The optimum stress design for high-mu high-k n/pFETs is also discussed and it is concluded that the application of transverse tensile stress is crucial for improved n/pFETs.