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We have developed a novel epitaxial nickel-aluminide silicide (NiSi2-xAlx) to reduce the Schottky-barrier height (SBH) and series resistance in n-channel MuGFETs with dopant-segregated Schottky-Barrier source/drain (DSS). 10% substitutional incorporation of Al in the Si matrix at the silicide-Si interface leads to a 37% reduction in the intrinsic SBH of nickel silicide. A further 42% effective reduction in the DSS SBH was attained with the combination of NiSi2-xAlx and DSS technology. Saturation drive current enhancement of 94% for NiSi2-xAlx DSS MuGFETs over NiSi DSS MuGFETs was achieved, attributed to SBH lowering, series resistance reduction and possibly silicide strain effects. As a result, an excellent drive current of 882 muA/mum at VGS-VT =VDS = 1.2 V was achieved for NiSi2-xAlxDSS MuGFETs with 55 nm gate length.