By Topic

A Robust SOI SRAM Architecture by using Advanced ABC technology for 32nm node and beyond LSTP devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

16 Author(s)

This paper presents that advanced actively body-bias controlled (Advanced ABC) technology contributes to enhancing operation margins of SRAMs. Significant enhancement of static noise margin (SNM) is successfully realized by using a body bias of load transistors while suppressing threshold-voltage variations for the first time. It is demonstrated that the write and read margins of 65nm-node SOI SRAMs are improved by the advanced ABC technology. Furthermore, it is found that the SNM is enhanced by 27% for 32nm and 49% for 22nm node. It is summarized that this technology is one of countermeasures for emerging generations.

Published in:

VLSI Technology, 2007 IEEE Symposium on

Date of Conference:

12-14 June 2007