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VFB Roll-off in HfO2 Gate Stack after High Temperature Annealing Process - A Crucial Role of Out-diffused Oxygen from HfO2 to Si

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7 Author(s)

We report for the first time that VFB roll-off behavior observed in thinner EOT region for metal/HfO2/SiO2 stacks is directly related to re-oxidation at the bottom SiO2/Si interface. Based on this understanding, we propose a possible solution for keeping high effective work-function (Phim,eff ) without VFB roll-off and demonstrate the obtained Phim,eff value of 4.9 eV mPt3Si/HfO2/SiO2 stack.

Published in:

VLSI Technology, 2007 IEEE Symposium on

Date of Conference:

12-14 June 2007

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