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Power gain (fMAX) of 350 GHz and cut-off frequency (fT) of 280 GHz is demonstrated for 36 nm Lpoly devices in a 45 nm bulk CMOS process. A record fT of 350 GHz (intrinsic fT 425 GHz), without any loss of fMAX is seen in 28 nm Lpoly devices. Combination of advanced lithography and liner stress effect can be leveraged to further boost fT and fMAX by 14% with a relaxed pitch device. Comparison with 90 and 65 nm nodes illustrates the impact of scaling and parasitics.