Technology Scaling and Device Design for 350 GHz RF Performance in a 45nm Bulk CMOS Process

Power gain (f
_MAX
) of 350 GHz and cut-off frequency (f
_T
) of 280 GHz is demonstrated for 36 nm L
_poly
devices in a 45 nm bulk CMOS process. A record f
_T
of 350 GHz (intrinsic f
_T
425 GHz), without any loss of f
_MAX
is seen in 28 nm L
_poly
devices. Combination of advanced lithography and liner stress effect can be leveraged to further boost f
_T
and f
_MAX
by 14% with a relaxed pitch device. Comparison with 90 and 65 nm nodes illustrates the impact of scaling and parasitics.