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Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy

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17 Author(s)
Yaocheng Liu ; IBM Semicond. R&D Center, Hopewell ; Gluschenkov, O. ; Jinghong Li ; Madan, A.
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Current drive enhancement is demonstrated in sub-40 nm NFETs with strained silicon carbon (Si:C) source and drain using a novel solid-phase epitaxy (SPE) technique for the first time. The very simple process uses no recess etch or epi deposition steps, adds minimal process cost, and can be easily integrated into a standard CMOS process. With a record high 1.65 at% substitutional C concentration in source and drain, 615 MPa uniaxial tensile stress was introduced in the channel, leading to a 35% improvement in electron mobility and 6% and 15% current drive increase in sub-40 and 200 nm channel length devices respectively.

Published in:

VLSI Technology, 2007 IEEE Symposium on

Date of Conference:

12-14 June 2007