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Carbon / high-k Trench Capacitor for the 40nm DRAM Generation

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6 Author(s)
Aichmayr, G. ; Qimonda Dresden GmbH & Co., Dresden ; Avellan, A. ; Duesberg, G.S. ; Kreupl, F.
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Carbon is proposed as a new FEOL material with high conductivity and thermal stability for CMOS integration. Here the application of carbon-based electrodes for future DRAM cell capacitors is presented. Trench capacitors with high-k dielectrics have been realized, fulfilling the requirements for serial resistance, capacitance, leakage, reliability and temperature stability beyond the 40 nm technology node.

Published in:

VLSI Technology, 2007 IEEE Symposium on

Date of Conference:

12-14 June 2007

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