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We present a 45 nm LSTP platform featuring a low-leakage/low-cost transistor and full-NCS/dual damascene Cu interconnects. By applying "MSA + spike-RTA" to annealing process, Ion at Vd=1.2 V are 0.54 mA/um at Ioff=40 pA/mum for nMOS and 0.22mA/um at Ioff=20 pA/mum for pMOS. CV/I performance is fully competitive at Vdd=1.1 V. The RC delay of our fulPNCS with thinned BRM is 14% lower than that of the ITRS 2006 update. The full-NCS has an excellent tolerability to stress migration and a mechanical toughness for wire bonding.