Effect of SAB process on GaN surfaces for low temperature bonding

In evaluating the energy for local elastic deformation in contact field, the surface roughness of GaN of 3 nm which was required for SAB was realized even after surface activation process, and even an improvement in the roughness was obtained by Ar-FAB irradiation of 0 degree incident angle. Moreover, to ease the damage to the composition of the surface when the GaN surface was activated, it was understood that Ar-FAB is effective. Bonding of GaN to Al was carried out at room temperature by the SAB method. As a result, GaN and bulk Al were successfully bonded with high bonding strength of 14.3 MPa.