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Printed Organic Transistors for Large-Area Electronics

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4 Author(s)
Someya, T. ; Univ. of Tokyo, Tokyo ; Sakurai, T. ; Sekitani, T. ; Noguchi, Y.

We have fabricated large-area, flexible pressure sensors using printed organic field-effect transistor (FET) active matrices. Polyimide precursors and silver nanoparticles are patterned on a polyimide film by using an inkjet printing system and cured at 180degC to form gate dielectric layers and electrodes for organic FETs, respectively. The channel layer of organic transistors is pentacene deposited in the vacuum system. The mobility of the transistors is 0.7 cm2/Vs and the on/off ratio exceeds 106.

Published in:

Polymers and Adhesives in Microelectronics and Photonics, 2007. Polytronic 2007. 6th International Conference on

Date of Conference:

Jan. 16 2007-Yearly 18 2007