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Modeling Transient Radiation Effects in Power MOSFETs

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3 Author(s)

Using standard device specifications and simple assumptions, the transient radiation response of VDMOS MOSFETs can be modeled in a standard circuit analysis program. The device model consists of a body diode, a parasitic bipolar transistor, and elements to simulate high-current reduced breakdown. The attached photocurrent model emulates response to any pulse shape and accounts for bias-dependent depletion regions. The model can be optimized to best fit available test data.

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Nuclear Science, IEEE Transactions on  (Volume:34 ,  Issue: 6 )