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Experimental Evidence for a New Single-Event Upset (SEU) Mode in a CMOS SRAM Obtained from Model Verification

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4 Author(s)
J. A. Zoutendyk ; Jet Propulsion Laboratory California Institute of Technology Pasadena, California 91109 ; L. S. Smith ; G. A. Soli ; R. Y. Lo

Modeling of SEU has been done in a CMOS static RAM containing one-micron channel-length transistors fabricated from a P-well epilayer process using both circuit-and numerical-simulation techniques. The modeling results have been experimentally verified with the aid of heavy-ion beams obtained from a three-stage tandem van de Graaff accelerator. Experimental evidence for a new SEU mode in an on n-channel device is presented.

Published in:

IEEE Transactions on Nuclear Science  (Volume:34 ,  Issue: 6 )