By Topic

The Characterization of Transistor Electrical Overstress Failure Probability Density Functions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Donald G. Pierce ; Booz-Allen & Hamilton Inc. 2340 Alamo Avenue S. E., Suite 207 Albuquerque, New Mexico 87106 ; Robert M. Mason

An empirical approach for characterizing transistor emitter-base failure threshold probability density functions is presented. The data analyzed come from a program of experiments designed to test component failures due to electrical overstress transients. First, an empirical distribution is obtained which describes the variation of the relative width of a large set of measured failure threshold distributions. Using this distribution, a technique is presented for obtaining threshold distribution parameters when the mean failure threshold is assumed to be known, Second, a technique is presented for combining the distribution of relative width with a derived mean uncertainty estimate. This yields a probabilistic statement of the threshold distribution parameters based on the estimated mean and the described uncertainty distributions. This approach is used to provide probabilistic statements on threshold lower bounds. An example of the use of these techniques is included.

Published in:

IEEE Transactions on Nuclear Science  (Volume:29 ,  Issue: 6 )