By Topic

Activation Energies of Thermal Annealing of Radiation-Induced Damage in n- and p-channels of CMOS Integrated Circuits, Part II

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Danchenko, Vitaly ; NASA, Goddard Space Flight Center Greenbelt, Maryland 20771 ; Fang, P.H. ; Brashears, Sidney S.

In Part I of this work, tempering and isothermal curves of annealing of radiation damage in p- and n-channels of RCA CD4007A CMOS integrated circuits were obtained for both the commercial ("soft") and J-process (106 rad-hard) fabrication technologies. These experimental data were analyzed for activation energies of thermal annealing using two independent theoretical treatments. Analysis of the activation energy distributions obtained indicated that the radiation-induced charge trapping in the gate oxide occurs mainly around the impurity centers. In this work, the same procedures are applied to devices of RCA's Z-process (105 rad-hard). Thermal annealing investigation of the Z-process reveals an anomalous annealing behavior of the p-channels, as compared to the p-channels of the commercial and J-processes. The thermal annealing-induced shift of the threshold potential extends far below the original value, which necessitated the development of a new mathematical treatment. This new treatment is presented here.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:28 ,  Issue: 6 )