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Avalanching in Single-Event-Upset Charge Collection in Semiconductor Diodes

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1 Author(s)
Ward, A. L. ; U. S. Army Laboratory Command Harry Diamond Laboratories Adelphi, MD 20783-1197

The one-dimensional computer program DIODE has been used to calculate charge collection in single ionizing events in silicon and gallium arsenide diodes. Avalanche multiplication is calculated to occur above a threshold of 3 V in a silicon diode, in agreement with published measurements. Since avalanching may lead to burnout in very-large-scale integration semiconductors, it is a greater danger than the funneling effect of space charge. Carrier recombination is found to be important in gallium arsenide.

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Nuclear Science, IEEE Transactions on  (Volume:33 ,  Issue: 6 )