By Topic

Radiation Damage Effects of Electrons and H, He, O, Cl and Cu Ions on GaAs JFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
A. R. Knudson ; Naval Research Laboratory Washington, D. C. 20375-5000 ; A. B. Campbell ; W. J. Stapor ; P. Shapiro
more authors

Radiation damage effects have been studied in GaAs EJFETs for a variety of different energetic particles. Differences in damage rates are consistent with simple displacement damage and carrier removal.

Published in:

IEEE Transactions on Nuclear Science  (Volume:32 ,  Issue: 6 )