Referenced Items are not available for this document.
Single-Event Upset (SEU) response of a bipolar low-power Schottky-diode-clamped TTL static RAM has been observed using Br ions in the 100-240 MeV energy range and 0 ions in the 20-100 MeV range. These data complete the experimental verification of circuit-simulation SEU modeling for this device. The threshold for onset of SEU has been observed by the variation of energy, ion species and angle of incidence. The results obtained from the computer circuit-simulation modeling and experimental model verification demonstrate a viable methodology for modeling SEU in bipolar integrated circuits.
Published in:
Nuclear Science, IEEE Transactions on
(Volume:32
,
Issue:
6
)
Date of Publication: Dec. 1985
- Page(s):
- 4164 - 4169
- ISSN :
- 0018-9499
- Digital Object Identifier :
- 10.1109/TNS.1985.4334087
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 12 November 2007
- Issue Date :
- Dec. 1985
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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