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Thirty Megarad CMOS Gate Array for Spacecraft Applications

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4 Author(s)
Henry D. Voss ; Lockheed Palo Alto Research Laboratory, Palo Alto, CA. 94304 ; Larry Roffelsen ; Charles Hardage ; Frank C. Jones

The recent development, testing, qualification and integration for spacecraft applications of a general purpose, 30 Megarad-hard, CMOS logic gate array having 3000 transistors is reported. Fabricated on the National Semiconductor, Inc. class S radation-hard line, the gate array operates at > 3 MHz (10V) after 107 rad(Si) total dose from a Co60 source. The threshold voltage change is 0.2 volts (0.5 volts) for the n-channel (p-channel) devices under 10V bias conditions. The rad-hard process of the CDI gate array family is mask compatible with the conventional process for cost effective semicustom design. The rad-hard array is presently operating in-orbit on the AMPTE satellite and is planned for instruments to be flown on the CRRES and UARS satellites.

Published in:

IEEE Transactions on Nuclear Science  (Volume:31 ,  Issue: 6 )