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Browse Journals & Magazines > Nuclear Science, IEEE Transac ...> Volume:31 Issue:6 Help

Total Dose and Dose Rate Radiation Characterization of EPI-CMOS Radiation Hardened Memory and Microprocessor Devices

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4 Author(s)
Gingerich, B.L. ; Harris Semiconductor P. O. Box 883 Melbourne, FL 32901 ; Hermsen, J.M. ; Lee, J.C. ; Schroeder, J.E.

The process, circuit discription, and total dose radiation characteristics are presented for two second generation hardened 4K EPI-CMOS RAMs and a first generation 80C85 microprocessor. Total dose radiation performance is presented to 10M rad-Si and effects of biasing and operating conditions are discussed. The dose rate sensitivity of the 4K RAMs is also presented along with single event upset (SEU) test data.

Published in:
Nuclear Science, IEEE Transactions on  (Volume:31 ,  Issue: 6 )

Date of Publication: Dec. 1984

Page(s):
1332 - 1336
ISSN :
0018-9499
Digital Object Identifier :
10.1109/TNS.1984.4333506
Product Type:
Journals & Magazines
Date of Current Version :
12 November 2007
Issue Date :
Dec. 1984
Sponsored by :
IEEE Nuclear and Plasma Sciences Society

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