By Topic

Total Dose and Dose Rate Radiation Characterization of a Hardened EPI-CMOS Gate Array

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
J. E. Schroeder ; Harris Semiconductor Melbourne, Florida ; B. L. Gingerich ; G. R. Bechtel

Radiation test results are presented for a 600 gate EPI-CMOS array processed for enhanced radiation hardness. The array is one of a family of standard CMOS gate arrays and is mask compatible and software compatible with the non-hardened products. Only minor performance degradation was observed for doses up to 105 rad-Si and all macros tested continue to function at doses greater than 106 rad-Si. Dose rate testing showed no latchup for doses to 1011 rads/sec. Upset in the D flip-flop for worst case conditions occurred at approximately 5×108 rads/sec.

Published in:

IEEE Transactions on Nuclear Science  (Volume:31 ,  Issue: 6 )