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Radiation test results are presented for a 600 gate EPI-CMOS array processed for enhanced radiation hardness. The array is one of a family of standard CMOS gate arrays and is mask compatible and software compatible with the non-hardened products. Only minor performance degradation was observed for doses up to 105 rad-Si and all macros tested continue to function at doses greater than 106 rad-Si. Dose rate testing showed no latchup for doses to 1011 rads/sec. Upset in the D flip-flop for worst case conditions occurred at approximately 5Ã108 rads/sec.