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A radiation-tolerant VLSI circuits investigation has been carried out using CMOS/SOS shift registers. Static and dynamic circuit performance degradation is discussed, based on MOS FET parameter shifts due to radiation effects, utilizing Â¿-ray irradiation and SPICE simulation. Functionality, after radiation doses in excess of 105; rad (Si), is shown for circuits fabricated by radiation-hardened process. Radiation-tolerance superiority of clocked gate CMOS (C2MOS) shift register circuits to transfer gate shift register circuits is discussed, placing emphasis mainly on radiation-bias effects. Based on the above results, the C2MOS is proposed for use in radiation-tolerant SOS VLSI circuits.