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A process has been developed for the manufacture of radiation hardened linear metal gate CMOS devices and complementary linear bipolar devices on the same silicon chip. The devices are fabricated into dielectrically isolated single crystal silicon tubs in a polysilicon substrate. A pyrogenic oxidation process was used to form the CMOS gate oxides, and total dose hardness to 1 Mrad(Si) has been demonstrated for both CMOS and bipolar devices. The pyrogenic oxidation process has been applied to a radiation hardened digital CMOS fabrication process, and a significant decrease in radiation effects has been observed in devices fabricated with the pyrogenic process.