Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 5:00 PM ET (12:00 - 21:00 UTC). We apologize for the inconvenience.
By Topic

A Process for the Simultaneous Production of Radiation Hardened Complementary Linear Bipolar and Linear Metal Gate CMOS Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Ports, K.A. ; Harris Semiconductor Melbourne, Florida 32901

A process has been developed for the manufacture of radiation hardened linear metal gate CMOS devices and complementary linear bipolar devices on the same silicon chip. The devices are fabricated into dielectrically isolated single crystal silicon tubs in a polysilicon substrate. A pyrogenic oxidation process was used to form the CMOS gate oxides, and total dose hardness to 1 Mrad(Si) has been demonstrated for both CMOS and bipolar devices. The pyrogenic oxidation process has been applied to a radiation hardened digital CMOS fabrication process, and a significant decrease in radiation effects has been observed in devices fabricated with the pyrogenic process.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:27 ,  Issue: 6 )