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Radiation Response of Several Memory Device Types

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3 Author(s)
P. R. Measel ; Boeing Aerospace Company Seattle, Washington 98124 ; R. B. Greegor ; K. L. Wahlin

Radiation testing was performed on a number of specific memory devices representative of the major LSI process technologies to address the problem of selection of suitable memories for hardened mircroprocessor based systems. Responses to dose-rate and total-dose irradiation were obtained using the Boeing Linac and Gammacell cobalt facilities. The devices chosen for testing were the Intel 2147 4K and 2125H 1K HMOS RAMs, the American Micro Systems 4017 4K VMOS RAM, the Fairchild 93471 4K TTL/ECL RAM, the Harris 6508 1K hard oxide CMOS RAM, the Harris 6611 256×4 CMOS PROM, the Intersil 6604 512×8 CMOS EPROM, and the Fairchild 93481 4K TTL/I2L dynamic RAM. Test methods are described and results are summarized for each.

Published in:

IEEE Transactions on Nuclear Science  (Volume:27 ,  Issue: 6 )