Cart (Loading....) | Create Account
Close category search window
 

An Investigation of the Transient Ionizing Radiation Response of Diffused Resistors Using a Pulsed Laser

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Stultz, T.J. ; Device Physics Group Lockheed Palo Alto Research Laboratory 3251 Hanover Street Palo Alto, California 94304 ; Crowley, J.L. ; Junga, F.A.

The transient response of diffused resistors to high dose rate ionizing radiation has been experimentally investigated using a pulsed GaAs laser. The effects of bias, bias configuration, and meandered isolation on the transient response have been determined. It is shown that the transient response of a homogeneous resistor-tub structure is due to conductivity modulation, whereas the response of a heterogeneous structure is dominated by photocurrent generation. Further, the heterogeneous structure response is shown to be highly sensitive to bias and bias configuration, and that meandered isolation improves the transient response significantly at low-bias voltages.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:27 ,  Issue: 5 )

Date of Publication:

Oct. 1980

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.