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An Investigation of the Transient Ionizing Radiation Response of Diffused Resistors Using a Pulsed Laser

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3 Author(s)
Stultz, T.J. ; Device Physics Group Lockheed Palo Alto Research Laboratory 3251 Hanover Street Palo Alto, California 94304 ; Crowley, J.L. ; Junga, F.A.

The transient response of diffused resistors to high dose rate ionizing radiation has been experimentally investigated using a pulsed GaAs laser. The effects of bias, bias configuration, and meandered isolation on the transient response have been determined. It is shown that the transient response of a homogeneous resistor-tub structure is due to conductivity modulation, whereas the response of a heterogeneous structure is dominated by photocurrent generation. Further, the heterogeneous structure response is shown to be highly sensitive to bias and bias configuration, and that meandered isolation improves the transient response significantly at low-bias voltages.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:27 ,  Issue: 5 )

Date of Publication:

Oct. 1980

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