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Transient Response of GaAs IC's to Ionizing Radiation

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2 Author(s)
Zuleeg, R. ; McDonnell Douglas Astronautics Company Huntington Beach, CA 92647 ; Notthoff, J.K.

Transient responses of GaAs E-JFET planar integrated circuits caused by a 25 ns wide ionizing radiation pulse from a LINAC were measured. Present technology circuits with 2.5 ¿m channel length devices have a measured logic upset level of about 1 × 1010 rad(GaAs)/s and a survival dose rate of approximately 1 × 1011 rad(GaAs)/s. A theoretical analysis for logic upset dose rate and a correlation of experimental results with theory is presented. For E-JFET devices with a channel length of 1 ¿m, a logic upset dose rate of 1 × 1011 rad(GaAs)/s is predicted.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:26 ,  Issue: 6 )

Date of Publication:

Dec. 1979

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