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Characterization of the Texas Instruments SBP9900A 16-bit microprocessor has been performed in radiation environments. The test results indicate that the devices will remain functional at reduced electrical performance following exposures to ionizing radiation levels of 3Ã106rads(Si) or neutron fluences of 3Ã1013n/cm2. Transient logic upset was not observed at ionizing radiation dose rates of less than 1Ã109rads(Si)/sec. The primary failure mode in the neutron and total ionizing dose environments was found to be a reduction in up-gain of the npn portion of the I2L cell. Methods of enhancing the radiation hardness of the SBP9900A are discussed.