By Topic

Post-Gate Plasma and Sputter Process Effects on the Radiation Hardness of Metal Gate CMOS Integrated Circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Anderson, Richard E. ; Sandia Laboratories Albuquerque, NM 87185

The compatibility of several post-gate plasma and sputtering processes with radiation-hardened CMOS processing has been investigated. Plasma etching, plasma ashing, RF sputter etching, and DC magnetron sputtering were found to cause little effect on the threshold voltage shifts observed on CMOS inverters under gamma irradiation. However, passivation of CMOS integrated circuits with reactive-plasma-deposited SiNx films causes severe postirradiation threshold shifts. The dependence of these threshold shifts on SiNx thickness, deposition parameters, and postdeposition anneals has been characterized. Intervening CVD films between the metal layer and the SiNX have a significant effect and in some cases reduce the observed threshold shifts considerably. The observed threshold shifts do not appear to be related to the stress of the SiNx films.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:25 ,  Issue: 6 )