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Browse Journals & Magazines > Nuclear Science, IEEE Transac ...> Volume:24 Issue:6 Help

Extensions of Models for Transistor Failure Probability Due to Neutron Fluence

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2 Author(s)
Michalowicz, Joseph V. ; Harry Diamond Laboratories Adelphi, Maryland 20783 ; Ausman, George A.

Models developed in the Hardening Options for Neutron Effects (HONE) program for predicting transistor failure probability are extended to include probability distributions for the initial current gains and to allow non-zero origins for all random variables concerned. Further, these models are generalized to consider two-transistor combinations. Test cases are calculated to compare the failure probability curves generated by these models with previous results.

Published in:
Nuclear Science, IEEE Transactions on  (Volume:24 ,  Issue: 6 )

Date of Publication: Dec. 1977

Page(s):
2365 - 2370
ISSN :
0018-9499
Digital Object Identifier :
10.1109/TNS.1977.4329223
Product Type:
Journals & Magazines
Date of Current Version :
12 November 2007
Issue Date :
Dec. 1977
Sponsored by :
IEEE Nuclear and Plasma Sciences Society

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