By Topic

Extensions of Models for Transistor Failure Probability Due to Neutron Fluence

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Michalowicz, Joseph V. ; Harry Diamond Laboratories Adelphi, Maryland 20783 ; Ausman, George A.

Models developed in the Hardening Options for Neutron Effects (HONE) program for predicting transistor failure probability are extended to include probability distributions for the initial current gains and to allow non-zero origins for all random variables concerned. Further, these models are generalized to consider two-transistor combinations. Test cases are calculated to compare the failure probability curves generated by these models with previous results.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:24 ,  Issue: 6 )