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Important Considerations for SEM Total Dose Testing

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2 Author(s)
K. F. Galloway ; Institute for Applied Technology National Bureau of Standards Washington, D. C. 20234 ; P. Roitman

The kilovolt electron beam utilized in a scanning electron microscope has been of interest as a tool for total dose screening of semiconductor devices for hardness assurance because of its convenience and because devices can be selectively irradiated directly at the wafer level. A number of factors such as the depth-dose distribution of kilovolt electrons, the dose-rate, uniformity of exposure, and device biasing must be considered when applying this technique. This paper is devoted to these and other aspects of SEM total dose testing.

Published in:

IEEE Transactions on Nuclear Science  (Volume:24 ,  Issue: 6 )