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Radiation Induced Leakage Currents in Silicon on Sapphire MOS Transistors

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2 Author(s)
Wang, S.T. ; Materials Laboratory, Princeton University Princeton, New Jersey 08540 ; Royce, B.S.H.

Measurements are reported in which photodepopulation and thermal bleaching techniques have been applied to the study of radiation induced trapped positive charge in the Al2O3 substrate of n-channel MOS/SOS devices. Photodepopulation data indicates an optical depth for the hole traps of 2.5 eV. Thermal bleaching studies yield a corresponding thermal depth of 0.75 eV. Some preliminary thermally stimulated current measurements which reveal additional low temperature stable traps are also reported.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:23 ,  Issue: 6 )

Date of Publication:

Dec. 1976

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