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Measurements are reported in which photodepopulation and thermal bleaching techniques have been applied to the study of radiation induced trapped positive charge in the Al2O3 substrate of n-channel MOS/SOS devices. Photodepopulation data indicates an optical depth for the hole traps of 2.5 eV. Thermal bleaching studies yield a corresponding thermal depth of 0.75 eV. Some preliminary thermally stimulated current measurements which reveal additional low temperature stable traps are also reported.