Skip to Main Content
Studies of the temporal, temperature, and electricfield dependences of radiation-induced charge transport have been performed for radiation-hardened SiO2 films. At room temperature for high applied fields, nearly all electrons and holes generated in the oxide by a pulse of ionizing radiation (5-keV electrons) drift to the interfaces, whereas at low temperatures only electrons contribute to observed transport for relatively low fields. Below ~130Â°K at high fields, field-induced emission of trapped holes occurs, giving rise to collection within seconds of a significant fraction of the total number of holes generated. The present hole transport data are accounted for quite well in terms of a multiple-trapping model with a spread in trap levels ranging from ~0.3 to ~0.5 eV from the valence band. Comparison with the stochastic hopping transport model is made and that model is found to be less satisfactory in explaining these data. Charge buildup was examined in a Co60 environment and it is demonstrated that oxides exhibiting radiation tolerance at room temperature display severe radiation-induced changes at 77Â°K. It is also demonstrated that low-temperature charge buildup problems can be alleviated either by employing an ion-implanted oxide or by applying a relatively high field to the oxide during irradiation.