Close category search window
 

Radiation Effects on Low Power Schottky Digital Integrated Circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Cooper, M.S. ; GTE Sylvania 77 "A" Street Needham Heights, Ma. 02194

Typical low power Schottky integrated circuits were exposed to two standard radiation environments to obtain characteristic radiation response in comparison to standard TTL. The neytron levels were 1.9×1012 and 2.1×1013 neutron/cm2 (Californium-252 spectrum). The gamma dose rates were 7×109 to 3.8×1010 rads(Si/sec (100 nanosecond pulse width). Neutron response was minimal - ß degraded less than 10%, other parameters shifted less than 5%. Photocurrents were roughly 50 to 100% higher than the standard TTL. Results indicate that LS series IC's were at least as neutron hard as typical standard TTL devices but may fail at a factor of 2 to 10 times lower gamma dose rate.

Published in:
Nuclear Science, IEEE Transactions on  (Volume:23 ,  Issue: 1 )

Date of Publication: Feb. 1976

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.