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Low Temperature Characteristics of Ion Implanted Silicon Position Sensitive Detectors

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2 Author(s)
E. Elad ; ORTEC, Inc. 100 Midland Road Oak Ridge, Tennessee 37830 ; R. Sareen

The operation of ion implanted silicon position sensitive detectors at low temperatures will be described. The improved noise performance of the detector at these temperatures in both the energy and position modes will be analyzed and its implications on low energy applications will be discussed. A large part of the investigation was devoted to the study of boron implanted resistors and their noise properties both at room temperature and cryogenic temperatures.

Published in:

IEEE Transactions on Nuclear Science  (Volume:21 ,  Issue: 1 )