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Effect of Co60 Gamma Radiation on Noise Parameters of Bipolar Transistors

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2 Author(s)
J. L. Prince ; Advanced Components Branch Semiconductor Research and Development Laboratory Texas Instruments, Incorporated ; R. A. Stehlin

Bipolar-transistor noise current and noise voltage were examined in the range from 100 Hz to 20 kHz as a function of ¿-dose from ¿= 105 Rad)Si) to ¿ = 1.1 × 107 Rad(Si). A variety of geometries of both NPN and PNP types were utilized. Substantial changes in inT were found for all device types but vnT changed in only certain device types.

Published in:

IEEE Transactions on Nuclear Science  (Volume:18 ,  Issue: 6 )