Effect of Co60 Gamma Radiation on Noise Parameters of Bipolar Transistors

Bipolar-transistor noise current and noise voltage were examined in the range from 100 Hz to 20 kHz as a function of γ-dose from γ= 105 Rad)Si) to γ = 1.1 × 107 Rad(Si). A variety of geometries of both NPN and PNP types were utilized. Substantial changes in inT were found for all device types but vnT changed in only certain device types.