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Electronic Recovery from Radiation Effects in CMNOS Structures

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2 Author(s)
Cricchi, J.R. ; Westinghouse Electric Corporation Defense and Space Center Baltimore, Maryland 21203 ; Barbe, D.F.

We consider the effects of ionizing radiation on Complementary Metal-Nitride-Oxide-Silicon structures for oxide thicknesses in the range of 20-50Å. The bi-directional radiation-induced threshold-voltage shifts in CMNOS structures are interpreted in terms of charge accumulation at the nitride-oxide interface. The electronic recovery of pre-irradiation threshold voltage levels by carrier transport through the thin oxide is shown experimentally.

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Nuclear Science, IEEE Transactions on  (Volume:18 ,  Issue: 6 )