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A set of experiments was performed at the White Sands Missile Range Fast-Burst Reactor Facility in which measurements were made of the annealing of three types of transistors (two NPN and one PNP) which were irradiated while biased off. Anneal factors as high as 5 or 6 were observed in the NPN devices when turned on tens of milliseconds after the neutron burst. The PNP device (2N2875) showed an anneal factor of nearly 4 when turned on 29 msec after the radiation pulse. The injection dependence of the annealing is clearly evident.