Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 12:00 PM ET (12:00 - 16:00 UTC). We apologize for the inconvenience.
By Topic

Neutron Radiation Effects in Junction Field-Effect Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Naik, S.S. ; Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory University of California, Berkeley, California 94720 ; Oldham, W.G.

A theory is formulated for the static properties of silicon junction field-effect transistors which are compensated with defects with deep energy levels. A single effective level of an acceptortype 0.40 eV below the conduction band accounts satisfactorily for the degradation of heavily doped n-channel devices with neutron irradiation. Furthermore, based on the existence of defect levels, a frequency dependence of the transconductance is predicted and observed experimentally. The charging and discharging of the defects in the junction space-charge region can follow only at low frequencies. At higher frequencies (above 10-100 kHz at room temperature) the trapped charge cannot respond to the signal frequency very rapidly and the transconductance may be several times higher than the low frequency value.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:18 ,  Issue: 5 )