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Neutron Radiation Effects in Junction Field-Effect Transistors

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2 Author(s)
Naik, S.S. ; Department of Electrical Engineering and Computer Sciences and the Electronics Research Laboratory University of California, Berkeley, California 94720 ; Oldham, W.G.

A theory is formulated for the static properties of silicon junction field-effect transistors which are compensated with defects with deep energy levels. A single effective level of an acceptortype 0.40 eV below the conduction band accounts satisfactorily for the degradation of heavily doped n-channel devices with neutron irradiation. Furthermore, based on the existence of defect levels, a frequency dependence of the transconductance is predicted and observed experimentally. The charging and discharging of the defects in the junction space-charge region can follow only at low frequencies. At higher frequencies (above 10-100 kHz at room temperature) the trapped charge cannot respond to the signal frequency very rapidly and the transconductance may be several times higher than the low frequency value.

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Nuclear Science, IEEE Transactions on  (Volume:18 ,  Issue: 5 )