By Topic

Effects of Metastable Charge States on Short-Term Annealing in p-Type Silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
O. L. Curtis ; Northrop Corporate Laboratories Hawthorne, California

In contrast to n-type material, short-term annealing of neutron-induced lifetime damage in p-type silicon is strongly dependent upon minority carrier density. While physical reordering is an important process, and may be somewhat dependent upon excess electron density in p-type material, arguments presented here indicate that this difference between n- and p-type material is primarily an electronic effect having to do with neutralization of metastable charge states induced during defect production. A qualitative model is presented which appears to be more consistent with experimental observations than those which depend upon physical defect motion alone.

Published in:

IEEE Transactions on Nuclear Science  (Volume:17 ,  Issue: 6 )