By Topic

Modeling of the Saturation Characteristics of High Voltage Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Gwyn, C.W. ; Sandia Laboratories Albuquerque, New Mexico 87115 ; Summers, G.G. ; Corbett, W.T.

The conventional Ebers-Moll model does not provide an accurate representation of the saturation region characteristics for transistors with a high resistivity collector region. Accurate one-dimensional calculations of device characteristics indicate that the size of the effective collector resistance is modulated at high currents by the extension of the neutral base into the collector region. Based on this analysis, a non-linear collector resistance is added to the Ebers-Moll equivalent circuit model to provide a more accurate representation of the characteristics in the saturation region.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:17 ,  Issue: 6 )