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Measurements of minority carrier lifetime damage constant and divacancy growth following neutron irradiation at 76Â°K have been used to characterize further the annealing of neutron damage in silicon below 300Â°K. It has been shown that electron injection into p-type silicon at 76Â°K causes recovery of the neutron induced defect clusters with the simultaneous appearance of divacancies. Comparison of isochronal annealing curves of damage constant taken with and without prior injection at 76Â°K illustrates the nature of cluster annealing below 300Â°K. The thermal annealing results are shown to agree with previous annealing measurements of the carrier removal rate.
Date of Publication: Dec. 1969