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A Microscopic View of Radiation Damage in Semiconductors Using EPR as a Probe Invited Paper

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1 Author(s)
Watkins, G.D. ; General Electric Research and Development Center Schenectady, New York

This is the text of a tutorial talk on the use of electron paramagnetic resonance (EPR) as a "microscopic" tool in the study of radiation-produced defects in semiconductors. The basic concepts of EPR and its general applicability to point defects in semiconductors are outlined. As an illustrative example, the study of a p-type (aluminum doped) silicon sample is described from 20.4°K irradiation with 1.5 MeV electrons through various annealing stages. By analysis of the EPR spectra, it is shown that the major defects can be identified and the annealing mechanisms determined.

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Nuclear Science, IEEE Transactions on  (Volume:16 ,  Issue: 6 )