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This is the text of a tutorial talk on the use of electron paramagnetic resonance (EPR) as a "microscopic" tool in the study of radiation-produced defects in semiconductors. The basic concepts of EPR and its general applicability to point defects in semiconductors are outlined. As an illustrative example, the study of a p-type (aluminum doped) silicon sample is described from 20.4Â°K irradiation with 1.5 MeV electrons through various annealing stages. By analysis of the EPR spectra, it is shown that the major defects can be identified and the annealing mechanisms determined.