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A Microscopic View of Radiation Damage in Semiconductors Using EPR as a Probe Invited Paper

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1 Author(s)
Watkins, G.D. ; General Electric Research and Development Center Schenectady, New York

This is the text of a tutorial talk on the use of electron paramagnetic resonance (EPR) as a "microscopic" tool in the study of radiation-produced defects in semiconductors. The basic concepts of EPR and its general applicability to point defects in semiconductors are outlined. As an illustrative example, the study of a p-type (aluminum doped) silicon sample is described from 20.4°K irradiation with 1.5 MeV electrons through various annealing stages. By analysis of the EPR spectra, it is shown that the major defects can be identified and the annealing mechanisms determined.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:16 ,  Issue: 6 )

Date of Publication:

Dec. 1969

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