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Effects of 600 MeV Protons on M.O.S. Transistors

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3 Author(s)
Rouanet, J.C. ; Centre d''Etude Spatiale des Rayonnements Toulouse - France ; Giraud, J.L. ; de Lafond, Y.Gervais

This paper deals with a brief report of the irradiation of M.O.S.T. at C.E.R.N., using 600 MeV protons. The behavior of two fundamental parameters : the treshold voltage and the mobility of the holes in the channel were studied using p-channel transistors.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:16 ,  Issue: 5 )

Date of Publication:

Oct. 1969

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