By Topic

Neutron Energy Dependence of Excess Charge Carrier Lifetime Degradation in Silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

Silicon p-i-n diode-neutron dosimeters were irradiated with monoenergetic neutrons having energies from 0.36 to 4.77 MeV. The variation with neutron energy of the damage coefficient for diode storage time, ¿T = ¿(l/Ts)/¿, and diode forward voltage sensitivity at constant current, S = ¿Vf/¿, were determined and found to be equal. Since ¿T; and S are linearly related to the damage coefficient for high level lifetime, ¿T; = ¿(1/¿)/¿, the variation with neutron energy of ¿T was also determined. Theoretically, it has been hypothesized that ¿T is proportional to N¿r(En), the average number of active recombination centers added per cm3 per neutron of energy En incident per cm2. It was further hypothesized that N¿r(En) is proportional to ¿(En), the average energy given to lattice atoms per cm3 per neutron of energy En incident per cm2. The theory of Lindhard, Nielson, Scharff, and Thomsen together with published values for differential neutron-silicon scattering, was used to calculate ¿(En). Comparison of theoretical and experimental results shows that ¿T, S, and ¿(En) do indeed have substantially the same neutron energy dependence.

Published in:

IEEE Transactions on Nuclear Science  (Volume:15 ,  Issue: 5 )