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Radiation Damage in Lithium Doped Silicon

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1 Author(s)
Carter, J.R. ; TRW Systems Bldg. Rl, Rm. 2006 One Space Park Redondo Beach, California 90278

Majority carrier removal rates for electron irradiation were studied in lithium doped float zone silicon. The removal appears to be due to reaction of lithium donors with displacement products to form uncharged complexes. A time dependent removal was observed after termination of the radiation. An exponential removal of carriers with electron fluence was also observed.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:14 ,  Issue: 6 )

Date of Publication:

Dec. 1967

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