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Permanent Radiation Damage Effects in Narrow-Base PNPN Devices

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2 Author(s)
Wilson, D.K. ; Bell Telephone Laboratories, Incorporated, Whippany, New Jersey ; Lee, H.S.

The effects of fast-neutron radiation damage in narrow-base PNPN devices were measured and compared with a simple, one-dimensional theory for PNPN devices, based on the work of Kuz'min. The limitations of a PNPN device in a radiation environment are primarily determined by the increased forward "on" voltage. A reasonably good fit of observed and calculated "on" voltages for a variety of PNPN's was obtained using a silicon lifetime damage constant of ¿106 sec-N/cm2. Design considerations for radiation-resistant PNPN's are discussed, and devices capable of operating after exposure to more than 1015 neutrons/cm2 are described. PNPN's are shown to be superior to bipolar transistors as power switches in a radiation environment.

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Nuclear Science, IEEE Transactions on  (Volume:14 ,  Issue: 5 )