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Transient Annealing in Sekiconductor Devices Following Pulsed Neutron Irradiation

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2 Author(s)
H. H. Sander ; Sandia Laboratory Albuquerque, New Mexico ; B. L. Gregory

Transient annealing following pulsed neutron exposure has been investigated in silicon transistors and solar cells as a function of both irradiation temperature and injection level. In addition, experiments incorporating both X and gamma ray irradiation have demonstrated that transient annealing is a bulk, not a surface, effect. The observed annealing following neutron irradiation is considerably slower at low temperatures than at room temperature. At 213??K thg density of annealable defects remaining at 10-10 seconds after exposure is approximately three times that observed at this same time for a 300??K irradiation. The injection studies show that at any temperatures from 76??K to 300??K the presence of minority carrier injection considerably speeds the transient annealing processes. A model is presented which explains many of the features observed in transient annealing. Various kinetic processes are discussed in the derivation of this model, including diffusion-limited and generation-limited processes, and the results of the model are compared with experimental data.

Published in:

IEEE Transactions on Nuclear Science  (Volume:13 ,  Issue: 6 )