By Topic

Hybrid Photomultiplier Tubes Using Internal Solid State Elements

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
L. G. Wolfgang ; ITT Industrial Laboratories Fort Wayne, Indiana ; J. M. Abraham ; C. N. Inskeep

A new family of photomultiplier tubes has been developed using silicon diodes and transistors as multiplying elements. For applications requiring low and medium gains these tubes offer several advantages over tubes utilizing ordinary dynode multiplication. These include ease of fabrication, mechanical ruggedness, reduced sensitivity to magnetic fields, and fast response. Diode structures have provided normal gains up to the theoretical maximum and have exhibited very short response times. In a few cases anomalously high diode gains have been observed, apparently as the result of induced avalanching near the diode front surface. Much greater gains have been obtained from various transistor structures with some sacrifice in the response time.

Published in:

IEEE Transactions on Nuclear Science  (Volume:13 ,  Issue: 3 )