By Topic

Methods for Measuring and Characterizing Transistor and Diode Large Signal Parameters for Use in Automatic Circuit Analysis Programs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
W. H. Sullivan ; Sandia Laboratory, Albuquerque, New Mexico ; J. L. Wirth

The mathematical bases of the Ebers-Moll, Charge-Control and Linvill models are discussed in order to establish the parameter requirements and the accuracy of these models. A recovery technique for measuring those parameters associated with minority carrier storage in devices is described and typical values are given for several high frequency devices. Other parameters, such as current gain and junction depletion capacitance, do not require special measurement procedures and in these cases the characterization of the bias dependence of the parameter is given primary emphasis. The use of the recovery technique in characterizing permanent radiation (neutron) damage and in studying damage mechanisms in transistors is also discussed.

Published in:

IEEE Transactions on Nuclear Science  (Volume:12 ,  Issue: 5 )