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The mathematical bases of the Ebers-Moll, Charge-Control and Linvill models are discussed in order to establish the parameter requirements and the accuracy of these models. A recovery technique for measuring those parameters associated with minority carrier storage in devices is described and typical values are given for several high frequency devices. Other parameters, such as current gain and junction depletion capacitance, do not require special measurement procedures and in these cases the characterization of the bias dependence of the parameter is given primary emphasis. The use of the recovery technique in characterizing permanent radiation (neutron) damage and in studying damage mechanisms in transistors is also discussed.